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| ON Semiconductort JFET VHF/UHF Amplifiers N-Channel -- Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Storage Channel Temperature Range 3 DRAIN Symbol VDS VDG VGS ID IG(f) PD Tstg Value 30 30 30 100 10 350 2.8 -65 to +150 3 DRAIN Unit Vdc Vdc Vdc mAdc mAdc mW mW/C C 1 2 3 BF244A, BF244B CASE 29-11, STYLE 22 TO-92 (TO-226AA) 1 2 3 2 GATE STYLE 22 1 GATE STYLE 23 BF245, BF245A, BF245B, BF245C CASE 29-11, STYLE 23 TO-92 (TO-226AA) 2 SOURCE 1 SOURCE ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate-Source (VDS = 15 Vdc, ID = 200 Adc) BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C V(BR)GSS VGS 0.4 0.4 1.6 3.2 VGS(off) IGSS -0.5 -- -- -- -- -- -- -- 7.5 2.2 3.8 7.5 -8.0 5.0 Vdc nAdc 30 -- -- Vdc Vdc Gate-Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS Zero-Gate-Voltage Drain Current (VDS = 15 Vdc, VGS = 0) BF245(1) BF245A, BF244A(2) BF245B, BF244B BF245C IDSS 2.0 2.0 6.0 12 -- -- -- -- 25 6.5 15 25 mAdc 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. (c) Semiconductor Components Industries, LLC, 2001 1 June, 2001 - Rev. 0 Publication Order Number: BF245A/D BF245A BF245B ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance Output Admittance Forward Transfer Admittance Reverse Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Cut-off Frequency(3) 3. The frequency at which gfs is 0.7 of its value at 1 kHz. (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) (VDS = 15 Vdc, VGS = 0, f = 200 MHz) (VDS = 15 Vdc, VGS = 0, f = 200 MHz) (VDS = 20 Vdc, -VGS = 1.0 Vdc) (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) (VDS = 20 Vdc, -VGS = 1.0 Vdc, f = 1.0 MHz) (VDS = 15 Vdc, VGS = 0) Yfs Yos Yfs Yrs Ciss Crss Coss F(Yfs) 3.0 -- -- -- -- -- -- -- -- 40 5.6 1.0 3.0 0.7 0.9 700 6.5 -- -- -- -- -- -- -- mmhos mmhos mmhos mmhos pF pF pF MHz COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C) grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 brs @ IDSS 0.25 IDSS gis, INPUT CONDUCTANCE (mmhos) bis, INPUT SUSCEPTANCE (mmhos) gis @ IDSS gis @ 0.25 IDSS bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.1 0.07 0.05 Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs) gfs, FORWARD TRANSCONDUCTANCE (mmhos) |b fs|, FORWARD SUSCEPTANCE (mmhos) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos) 10 5.0 2.0 1.0 0.5 0.2 0.1 gos @ IDSS bos @ IDSS and 0.25 IDSS gfs @ IDSS gfs @ 0.25 IDSS 0.05 0.02 0.01 10 20 30 gos @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 7001000 500 700 1000 Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos) http://onsemi.com 2 BF245A BF245B COMMON SOURCE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 1.0 350 100 100 50 0.9 200 300 60 70 80 90 100 110 120 0.8 ID = IDSS 400 500 600 0.6 900 800 700 900 600 700 800 290 280 270 260 250 240 70 80 90 100 110 120 340 330 320 40 30 20 10 0 0.4 350 340 330 32 ID = 0.25 IDSS 200 300 400 500 300 60 310 50 ID = IDSS, 0.25 IDSS 800 600 400 300 200 100 0.0 700 500 0.1 900 0.2 30 29 28 27 26 25 24 0.3 31 0.7 130 230 130 23 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 22 Figure 5. S11s 30 40 20 10 0 350 340 330 320 40 30 20 Figure 6. S12s 10 0 350 340 330 100 200 ID = 0.25 IDSS 300 1.0 400 100 200 500 300 600 400 700 0.9 500 800 600 ID = IDSS 700 900 800 900 0.8 32 50 0.6 310 50 31 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 200 100 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 900 0.5 300 290 280 270 60 70 80 90 100 110 120 30 29 28 27 26 25 24 0.4 0.7 0.3 0.6 0.3 260 250 240 0.4 0.5 130 0.6 230 130 23 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 22 Figure 7. S21s http://onsemi.com 3 Figure 8. S22s BF245A BF245B COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C) grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 20 30 gig @ IDSS, 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS gig @ IDSS grg @ 0.25 IDSS big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.007 0.005 Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg) gfg , FORWARD TRANSCONDUCTANCE (mmhos) bfg , FORWARD SUSCEPTANCE (mmhos) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS gfg @ 0.25 IDSS gog, OUTPUT ADMITTANCE (mmhos) bog, OUTPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 gfg @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 10 bog @ IDSS, 0.25 IDSS gog @ IDSS brg @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) gog @ 0.25 IDSS 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 500 700 1000 Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) http://onsemi.com 4 BF245A BF245B COMMON GATE CHARACTERISTICS S-PARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz) 30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 70 80 90 100 110 120 0.4 ID = IDSS 200 200 300 350 340 330 320 40 30 20 10 0 0.04 350 340 330 32 ID = 0.25 IDSS 400 500 600 400 500 600 700 700 800 900 0.03 310 50 0.02 31 300 300 290 280 270 260 250 240 60 70 80 90 100 110 120 600 ID = IDSS 700 800 900 100 500 600 700 800 30 29 28 27 0.01 0.3 800 900 0.0 ID = 0.25 IDSS 0.01 26 25 24 0.02 130 230 130 900 23 0.03 22 190 200 210 140 150 160 170 180 190 200 210 220 140 150 160 170 0.04 180 Figure 13. S11g 30 40 20 10 0 0.5 100 100 0.3 ID = IDSS 310 50 350 340 330 320 40 30 20 Figure 14. S12g 10 0 1.5 1.0 100 0.9 350 300 200 400 340 500 600 700 800 900 31 330 32 0.4 50 ID = IDSS, 0.25 IDSS 0.8 60 70 80 90 100 110 120 300 ID = 0.25 IDSS 290 280 900 900 270 260 250 240 60 70 80 90 100 110 120 30 29 28 27 26 25 24 0.2 0.7 0.1 0.6 130 230 130 23 140 150 160 170 180 190 200 210 220 140 150 160 170 180 190 200 210 22 Figure 15. S21g http://onsemi.com 5 Figure 16. S22g BF245A BF245B PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- B K XX G H V 1 D J C SECTION X-X N N STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN STYLE 23: PIN 1. GATE 2. SOURCE 3. DRAIN DIM A B C D G H J K L N P R V http://onsemi.com 6 BF245A BF245B Notes http://onsemi.com 7 BF245A BF245B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 BF245A/D |
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